production process TQHBT3 ingap hbt foundry service features ? 2? and 3-um emitter widths ? >22 db mag @ 6 ghz; with 3-um emitters ? amplifier ruggedness: vswr 70:1 @ 5 v supply ? high linearity in pa applications ? ingap emitter process for high re- liability and thermal stability ? base etch stop for uniformity ? mocvd epitaxy ? high density interconnects; ? 2 global, 1 local ? over 6 m total thickness ? dielectric encapsulated metals ? thick metal interconnects: ? enhanced thermal management ? minimum die size ? effective base ballasting for maxi- mum gain ? 150 mm wafers ? high-q passives ? nicr thin film resistors ? high value capacitors & stacked capacitors ? backside vias optional ? validated models and design support applications ? power amplifiers ? driver amplifiers ? wideband, general purpose amplifiers general description triquint?s new TQHBT3 process is a highly reliable ingap hbt process with three levels of interconnecting metal and state-of-the-art device performance. thick metal intercon- nects and high quality passives promote integration. the thick metal interconnects, which promote enhanced thermal man- agement, and high density capacitors keep die sizes small. mocvd epitaxial processes are utilized to grow the active layers. a carbon-doped base and ingap emitter are utilized for high rf performance consistent with high reliability. de- signs utilizing the 3-um emitter width have the performance of previous 2-um emitters, but with the reliability and ruggedness associated with wider emitters. precision nicr resistors and high value mim capacitors are included. the three metal layers are encapsulated in a high performance dielectric that allows wiring flexibility and plastic packaging simplicity. semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 1 of 6; rev 1.1 2/8/2005 TQHBT3 process cross-section dielectric metal 2 - 4um dielectric mim nicr metal 0 c c b b e emitter base collector sub collector buffer & substrate isolation implant metal 1 - 2um metal 1 - 2um dielectric metal 2 - 4um dielectric mim nicr metal 0 c c b b e emitter base collector sub collector buffer & substrate isolation implant metal 1 - 2um metal 1 - 2um dielectric metal 2 - 4um dielectric mim nicr metal 0 c c b b e emitter base collector sub collector buffer & substrate isolation implant metal 1 - 2um metal 1 - 2um dielectric metal 2 - 4um dielectric mim nicr metal 0 c c b b e emitter base collector sub collector buffer & substrate isolation implant metal 1 - 2um metal 1 - 2um
production process TQHBT3 ingap hbt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 2 of 6; rev 1.1 2/8/2005 TQHBT3 process details element parameter value units hbt transistor emitter periphery (standard cell) 3 x 3 x 30 m vbe 1.15 v beta 130 ft 40 ghz fmax 65 ghz bvcbo 24 v bvbeo 7 v bvceo 14 v interconnect metal layers 3 mim caps (top stacked cap) value 1200 pf/mm2 inductors q @ 2 ghz >20 resistors nicr 50 ohms/sq bulk 350 ohms/sq vias yes mask layers no vias 14 with vias 16 2um emitters are also available! bottom stacked cap value 625 pf/mm2 TQHBT3 process details hbt storage temperature range -65 to +150 deg c hbt operating junction temperature range -55 to +150 deg c junction current denstity 20 ka/cm^2 20 v mim capacitor maximum ratings
production process TQHBT3 ingap hbt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 3 of 6; rev 1.1 2/8/2005 TQHBT3 dc i?v plot ft, fmax vs ic @vce=3.5v 0246 8 vce (v) 0 0.02 0.04 0.06 0.08 0.1 ic (a) device size: 3x3x30 ib=0.7ua to ib=600ua, step size=67ua 0 10 20 30 40 50 60 70 80 0.00e+00 5.00e-02 1.00e-01 1.50e-01 2.00e-01 2.50e-01 3.00e-01 ic (ma/um^2) frequency (ghz) ft fmax
production process TQHBT3 ingap hbt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 4 of 6; rev 1.1 2/8/2005 gain at 6.1 ghz versus current density gummel plot of TQHBT3 5 7 9 11 13 15 17 19 21 23 25 0 1020304050 ic (ka/cm2) gain (db) 3x3x30 3x3x45 11.11.21.31.4 vbe(v) 1e-007 1e-006 1e-005 0.0001 0.001 0.01 0.1 ic (a) gummel plot (ic vs vbe) device size:3x3x30
production process TQHBT3 ingap hbt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 5 of 6; rev 1.1 2/8/2005 cw @ 1.9 ghz -20 -15 -10 -5 0 5 -5 0 5 10 15 20 25 gain(db), pout(dbm) 0 20 40 60 80 pout(dbm) gain (db) -20 -15 -10 -5 0 5 pin (dbm) p a e ( % ) pae(%) gain, pout, pae vs pin device size: 3x3x30 freq=1.9ghz vce=3.4v, ic=3.3ma load gamma @ 1.9ghz = 0.43<24.7 source gamma @ 1.9ghz = 0.62<164.7 load gamma @ 3.8ghz = 0.59<-171.6 sou r ce gamma @ 3.8ghz = 0.71<17.1
production process TQHBT3 ingap hbt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 6 of 6; rev 1.1 2/8/2005 applications support services ? tiling of gdsii stream files including pcm ? design rule check services ? layout versus schematic check services ? packaging development engineering ? test development engineering: ? on-wafer ? packaged parts ? thermal analysis engineering ? yield enhancement engineering ? part qualification services ? failure analysis manufacturing services ? mask making ? 150 mm wafer fab ? wafer thinning ? wafer sawing ? substrate vias ? dc die sort testing ? rf on-wafer testing ? plastic packaging ? rf packaged part testing please contact your local triquint semiconductor representative/ distributor or foundry services division marketing for additional information: e-mail: sales@triquint.com phone: (503) 615-9331 fax: (503) 615-8905 design tool status ? design manual ? device library of circuit elements: transistors, diodes, thin film resistors, capacitors, inductors ? parameters for 2nd-generation, triquint-modified gummel- poon model available now ? agilent ads & awr mwo ? process variation models available now ? layout files available for: ? iced & cadence ? layout rule sets for design rule & layout versus schematic check available: ? iced & cadence ? qualified package models for supported package styles prototyping and development ? prototype development quickturn (pdq): ? shared mask set; ? run monthly ? hot lot cycle time ? via and non-via options ? prototype wafer option (pwo): ? customer-specific masks, customer schedule ? 2 wafers delivered ? with thinning and sawing; optional backside vias process qualification status ? process based on tqhbt2.5 production process. ? full wafer level, process and packaged part qualification complete for TQHBT3. contact triquint for relevant reports. ? for more information on quality & reliability, contact triquint or visit: www.triquint.com/manufacturing/qr/ training ? gaas design classes: ? half day introduction; upon request ? four day technical training; fall & spring at triquint oregon facility ? for training & pdq schedules please visit: www.triquint.com/foundry/
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